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For the Inventor, By the Inventor

Austin, TX, United States of America

Zhonghai Shi

This inventor holds 15 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Cirrus Logic Inc., Freescale Semiconductor,inc.. Active years: 2007-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhonghai Shi. Retrieved from https://idiyas.com/inventor/zhonghai-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 66.7

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 114(Granted Patents)


Company Filing History:

goldMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 2,689 
 
Cirrus Logic Inc.
 patents
bronzeMedal4 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
4. 1 out of 13,185 
 
Advanced Micro Devices Corporation
 patents
5. 1 out of 29,922 
 
Texas Instruments Corporation
 patents

Years Active: 2007-2020

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Areas of Expertise:
Capacitors
Semiconductor Structures
Polycrystalline Resistor
Contact Resistance
Transistor Devices
Voltage Controlled Oscillator
Static Random Access Memory
Dual-Substrate Orientation
15 patents (USPTO):Explore Patents
1. 10867994 - High density capacitors formed from thin vertical semiconductor structures such as FINFETs (2020-12-15),
2. 10068779 - Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate (2018-09-04),
3. 9929147 - High density capacitors formed from thin vertical semiconductor structures such as FinFETs (2018-03-27),
4. 9761461 - Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate (2017-09-12),
5. 8687417 - Electronic device and method of biasing (2014-04-01),
6. 8654562 - Static random access memory cell with single-sided buffer and asymmetric construction (2014-02-18),
7. 8329519 - Methods for fabricating a semiconductor device having decreased contact resistance (2012-12-11),
8. 8134208 - Semiconductor device having decreased contact resistance (2012-03-13),
9. 8026142 - Method of fabricating semiconductor transistor devices with asymmetric extension and/or halo implants (2011-09-27),
10. 8003466 - Method of forming multiple fins for a semiconductor device (2011-08-23),
11. 7838345 - Electronic device including semiconductor fins and a process for forming the electronic device (2010-11-23),
12. 7803670 - Twisted dual-substrate orientation (DSO) substrates (2010-09-28),
13. 7761838 - Method for fabricating a semiconductor device having an extended stress liner (2010-07-20),
14. 7556992 - Method for forming vertical structures in a semiconductor device (2009-07-07),
15. 7256657 - Voltage controlled oscillator having digitally controlled phase adjustment and method therefor (2007-08-14),

Title: Innovations of Zhonghai Shi

Introduction

Zhonghai Shi is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, he has made remarkable advancements in the field of integrated circuits and capacitors.

Latest Patents

One of his latest patents involves high-density capacitors formed from thin vertical semiconductor structures, such as FINFETs. This innovation utilizes vertical structures as high-density capacitance for integrated circuits. These thin vertical structures can function as insulators in metal-insulator-metal (MIM) capacitors. The manufacturing process employs three-dimensional semiconductor technology, including FinFET technology. Additionally, he has developed systems and methods for fabricating a polycrystalline semiconductor resistor on a semiconductor substrate. This integrated circuit design includes regions of shallow-trench isolation field oxide and dummy diffusion, enhancing the performance of polycrystalline semiconductor resistors.

Career Highlights

Zhonghai Shi has worked with notable companies in the semiconductor industry, including Globalfoundries Inc. and Freescale Semiconductor, Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Throughout his career, Zhonghai Shi has collaborated with talented individuals such as David Donggang Wu and Jingrong Zhou. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Zhonghai Shi's contributions to semiconductor technology and his impressive portfolio of patents highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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