The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Apr. 08, 2008
Zhonghai Shi, Austin, TX (US);
David Wu, Austin, TX (US);
Jingrong Zhou, Austin, TX (US);
Ruigang LI, Austin, TX (US);
Zhonghai Shi, Austin, TX (US);
David Wu, Austin, TX (US);
Jingrong Zhou, Austin, TX (US);
Ruigang Li, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A fabrication process for a FinFET device is provided. The process begins by providing a semiconductor wafer having a layer of conductive material such as silicon. A whole-field arrangement of fins is then formed from the layer of conductive material. The whole-field arrangement of fins includes a plurality of conductive fins having a uniform pitch and a uniform fin thickness. Next, a cut mask is formed over the whole-field arrangement of fins. The cut mask selectively masks sections of the whole-field arrangement of fins with a layout that defines features for a plurality of FinFET devices. The cut mask is used to remove a portion of the whole-field arrangement of fins, the portion being unprotected by the cut mask. The resulting fin structures are used to complete the fabrication of the FinFET devices.