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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Zhihong Yang

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 288(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2009 - 2015)
  • San Jose, CA (US) (2013 - 2023)

Company Filing History:

goldMedal26 out of 2,078 
 
Palo Alto Research Center Inc.
 patents
silverMedal2 out of 24,189 
 
Xerox Corporation
 patents

Years Active: 2009-2025

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28 patents (USPTO):
1. 12366815 - Focusing optics for use with semiconductor lasers for imaging applications (2025-07-22),
2. 11827037 - Semiconductor array imager for printing systems (2023-11-28),
3. 10249786 - Thin film and substrate-removed group III-nitride based devices and method (2019-04-02),
4. 10164146 - P-side layers for short wavelength light emitters (2018-12-25),
5. 9444224 - Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer (2016-09-13),
6. 9401452 - P-side layers for short wavelength light emitters (2016-07-26),
7. 9219189 - Graded electron blocking layer (2015-12-22),
8. 8964796 - Structure for electron-beam pumped edge-emitting device and methods for producing same (2015-02-24),
9. 8822314 - Method of growing epitaxial layers on a substrate (2014-09-02),
10. 8571817 - Integrated vapor delivery systems for chemical vapor deposition precursors (2013-10-29),
11. 8513643 - Mixed alloy defect redirection region and devices including same (2013-08-20),
12. 8354689 - Light emitting devices having dopant front loaded tunnel barrier layers (2013-01-15),
13. 8330144 - Semi-polar nitride-based light emitting structure and method of forming same (2012-12-11),
14. 8247249 - Semi-polar nitride-based light emitting structure and method of forming same (2012-08-21),
15. 8183649 - Buried aperture nitride light-emitting device (2012-05-22),

Sure, here is the article about inventor Zhihong Yang:

Title: Innovator Spotlight: Zhihong Yang - Pioneering Advances in Group III-Nitride Based Devices

Introduction:

Zhihong Yang is a talented inventor based in Sunnyvale, CA, with an impressive portfolio of 26 patents to his name. His groundbreaking work in the field of group III-nitride based devices has revolutionized the industry and cemented his status as a visionary in the field of semiconductor technology.

Latest Patents:

Yang's latest patents showcase his innovative approach to thin film and substrate-removed group III-nitride based devices. One patent details a method for thinning bulk aluminum nitride substrates to less than 50 microns thickness, while another focuses on enhancing the defect density in epitaxial Group-III-nitride layers to improve device performance.

Career Highlights:

Currently employed at the renowned Palo Alto Research Center Inc. (PARC), Zhihong Yang continues to push the boundaries of innovation in the semiconductor industry. His contributions have led to significant advancements in the development of high-performance light emitters and other cutting-edge technologies.

Collaborations:

Yang has had the privilege of working alongside esteemed colleagues such as Christopher L Chua and Noble Marshall Johnson. Their collaborative efforts have resulted in the realization of pioneering technologies that have the potential to shape the future of the semiconductor industry.

Conclusion:

In conclusion, Zhihong Yang's relentless pursuit of innovation and his exceptional technical expertise have established him as a leading figure in the field of group III-nitride based devices. His passion for pushing the boundaries of what is possible continues to inspire his peers and pave the way for even greater advancements in semiconductor technology.

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