The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 14, 2012
John E. Northrup, Palo Alto, CA (US);
Bowen Cheng, Atherton, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Zhihong Yang, San Jose, CA (US);
Suk Choi, San Jose, CA (US);
John E. Northrup, Palo Alto, CA (US);
Bowen Cheng, Atherton, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Zhihong Yang, San Jose, CA (US);
Suk Choi, San Jose, CA (US);
PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US);
Abstract
A light emitting device includes a p-side heterostructure, an n-side heterostructure, an active region disposed between the p-side heterostructure and the n-side heterostructure. An electron blocking layer (EBL) disposed between the p-side heterostructure and the active region comprises an aluminum containing group-III-nitride alloy. An aluminum composition of the EBL decreases as a function of distance along a [0001] direction from the active region towards the p-side heterostructure over a majority of the thickness of the EBL.