The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jun. 01, 2010
Andre Strittmatter, Berlin, DE;
Noble M. Johnson, Menlo Park, CA (US);
Mark Teepe, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, Sunnyvale, CA (US);
John E. Northrup, Palo Alto, CA (US);
Andre Strittmatter, Berlin, DE;
Noble M. Johnson, Menlo Park, CA (US);
Mark Teepe, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, Sunnyvale, CA (US);
John E. Northrup, Palo Alto, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with 'window' openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.