The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Apr. 28, 2011
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, San Jose, CA (US);
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, San Jose, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
Light emitting devices described herein include dopant front loaded tunnel barrier layers (TBLs). A front loaded TBL includes a first surface closer to the active region of the light emitting device and a second surface farther from the active region. The dopant concentration in the TBL is higher near the first surface of the TBL when compared to the dopant concentration near the second surface of the TBL. The front loaded region near the first surface of the TBL is formed during fabrication of the device by pausing the growth of the light emitting device before the TBL is formed and flowing dopant into the reaction chamber. After the dopant flows in the reaction chamber during the pause, the TBL is grown.