The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Sep. 14, 2012
John E. Northrup, Palo Alto, CA (US);
Bowen Cheng, Atherton, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Zhihong Yang, San Jose, CA (US);
John E. Northrup, Palo Alto, CA (US);
Bowen Cheng, Atherton, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Zhihong Yang, San Jose, CA (US);
PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US);
Abstract
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlGaN doped with a p-type dopant and AlGaN doped with the p-type dopant, where x≦x≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.