The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 14, 2012
Christopher L. Chua, San Jose, CA (US);
Mark R. Teepe, Menlo Park, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Zhihong Yang, San Jose, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Clifford Knollenberg, San Bruno, CA (US);
Christopher L. Chua, San Jose, CA (US);
Mark R. Teepe, Menlo Park, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Zhihong Yang, San Jose, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Clifford Knollenberg, San Bruno, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.