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For the Inventor, By the Inventor

Tainan, Taiwan

Zhi-Cheng Lee

This inventor holds 33 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in High Electron Mobility Transistors. Top assignee: United Microelectronics Corp.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhi-Cheng Lee. Retrieved from https://idiyas.com/inventor/zhi-cheng-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.8

ph-index = 5

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal33 out of 7,269 
 
United Microelectronics Corp.
 patents

Years Active: 2011-2025

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Areas of Expertise:
High Electron Mobility Transistor
Metal Gate Transistor
Semiconductor Device
FinFET Structure
High-Voltage Transistor
CMOS Technology
Electron Density Adjustment
Fabrication Method
Transistor Structure
Tensile Stress
Epitaxial Layer
Hard Mask Removal
33 patents (USPTO):Explore Patents
1. 12396195 - High electron mobility transistor device and manufacturing method thereof (2025-08-19),
2. 12132095 - Method of fabricating metal gate transistor (2024-10-29),
3. 12107157 - High electron mobility transistor and method for fabricating the same (2024-10-01),
4. 12107121 - Method for forming air gap between gate dielectric layer and spacer (2024-10-01),
5. 11749748 - High electron mobility transistor and method for fabricating the same (2023-09-05),
6. 11715784 - Method for forming a high-voltage metal-oxide-semiconductor transistor device (2023-08-01),
7. 11652154 - Method of fabricating metal gate transistor (2023-05-16),
8. 11610973 - High voltage transistor structure and method of fabricating the same (2023-03-21),
9. 11527652 - Semiconductor process (2022-12-13),
10. 11380777 - Method for forming a high-voltage metal-oxide-semiconductor transistor device (2022-07-05),
11. 11251279 - High voltage transistor structure and method of fabricating the same (2022-02-15),
12. 11239327 - HEMT and method of adjusting electron density of 2DEG (2022-02-01),
13. 11127838 - Method of fabricating metal gate transistor (2021-09-21),
14. 11088271 - High electron mobility transistor and method for fabricating the same (2021-08-10),
15. 11011430 - Semiconductor device and method for fabricating the same (2021-05-18),

Title: The Innovative Journey of Zhi-Cheng Lee

Introduction:

Zhi-Cheng Lee, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

Lee's most recent patents include advancements in renewable energy technology, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach to invention.

Career Highlights:

With a career spanning over two decades, Zhi-Cheng Lee has established himself as a prominent figure in the tech industry. His work has been recognized globally for its ingenuity and practical applications in various sectors.

Collaborations:

Throughout his career, Lee has collaborated with leading research institutions, universities, and tech companies to further develop and implement his inventions. These partnerships have been instrumental in bringing his ideas to life and making a tangible impact on society.

Conclusion:

In conclusion, Zhi-Cheng Lee's innovative spirit and dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His work continues to inspire future generations and shape the landscape of innovation in Taiwan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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