The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jul. 13, 2022
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Huai-Tzu Chiang, Tainan, TW;
Kai Lin Lee, Kinmen County, TW;
Zhi-Cheng Lee, Tainan, TW;
Chuang-Han Hsieh, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01);
Abstract
A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.