Tainan, Taiwan

Chuang-Han Hsieh


Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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5 patents (USPTO):Explore Patents

Title: Chuang-Han Hsieh: Innovator in Semiconductor Technology

Introduction

Chuang-Han Hsieh is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced devices that enhance the performance and efficiency of electronic components.

Latest Patents

Among his latest innovations is a patent for a high electron mobility transistor (HEMT) device and its manufacturing method. This device comprises a substrate, a channel layer, a source, a drain, a buffer layer, and multiple amorphous regions. The design allows for improved electronic performance by optimizing the arrangement of these components. Another notable patent involves a method for forming an air gap between the gate dielectric layer and the spacer in semiconductor devices. This method enhances the fabrication process by ensuring better performance and reliability of the semiconductor components.

Career Highlights

Chuang-Han Hsieh is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to push the boundaries of semiconductor technology and contribute to the development of innovative solutions.

Collaborations

He has collaborated with talented coworkers, including Zhi-Cheng Lee and Kai-Lin Lee, to further advance their research and development efforts in the semiconductor field.

Conclusion

Chuang-Han Hsieh's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator in the industry. His inventions continue to pave the way for advancements in electronic devices.

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