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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12107121 B1

PDFFull Text
Date of Patent:
Oct. 01, 2024

Filed:

Nov. 01, 2021

Method for forming air gap between gate dielectric layer and spacer

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhi-Cheng Lee, Tainan, TW;

Chuang-Han Hsieh, Tainan, TW;

Kai-Lin Lee, Kinmen County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 29/0847 (2013.01); H01L 29/515 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method for fabricating a semiconductor device includes the steps of first forming a gate dielectric layer on a substrate, forming a gate material layer on the gate dielectric layer, patterning the gate material layer and the gate dielectric layer to form a gate structure, removing a portion of the gate dielectric layer, forming a spacer adjacent to the gate structure and at the same time forming an air gap between the gate dielectric layer and the spacer, and then forming a source/drain region adjacent to two sides of the spacer.

Find Patent Forward Citations

Lee, Zhi-Cheng. (2024). Method for forming air gap between gate dielectric layer and spacer (U.S. Patent No. 12107121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12107121

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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