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For the Inventor, By the Inventor

Boise, ID, United States of America

Zhenyu Lu

This inventor holds 30 USPTO granted patents and 1 EPO patent, primarily in Ferroelectric Memory Devices. Top assignees: Micron Technology Incorporated, Wuxi Petabyte Technologies Co, Ltd., Intel Corporation. Active years: 2008-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhenyu Lu. Retrieved from https://idiyas.com/inventor/zhenyu-lu-f2y3i3ux

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30

% Patents Active = 86.7

 

Average Co-Inventor Count = 2.9

ph-index = 7

Forward Citations = 184(Granted Patents)


Company Filing History:

goldMedal22 out of 39,253 
 
Micron Technology Incorporated
 patents
silverMedal3 out of 10 
 
Wuxi Petabyte Technologies Co, Ltd.
 patents
bronzeMedal1 out of 56,365 
 
Intel Corporation
 patents
4. 1 out of 7 
 
Wuxi Smart Memories Technologies Co., Ltd.
 patents
5. 3 out of 834,570 
Other
 patents

Years Active: 2008-2024

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Areas of Expertise:
Ferroelectric Memory
Three Dimensional Memory
Semiconductor Fabrication
Memory Cells
Thin-Film Transistors
Chemical Mechanical Polishing
Optical Radiation Concentrator
Infant Formula Preparation
Slurries
Phase Change Materials
Monolithic Semiconductor Channel
Stacked Hollow Channels
30 patents (USPTO):Explore Patents
1. 12185551 - Methods for forming ferroelectric memory devices (2024-12-31),
2. 11949022 - Three dimensional memory (2024-04-02),
3. 11665893 - Methods and apparatuses having strings of memory cells including a metal source (2023-05-30),
4. 11626424 - Semiconductor devices and methods of fabrication (2023-04-11),
5. 11289611 - Three dimensional memory (2022-03-29),
6. 11088168 - Semiconductor devices and methods of fabrication (2021-08-10),
7. 11018149 - Building stacked hollow channels for a three dimensional circuit device (2021-05-25),
8. 10879259 - Methods and apparatuses having memory cells including a monolithic semiconductor channel (2020-12-29),
9. 10861862 - Ferroelectric memory devices (2020-12-08),
10. 10833099 - Apparatuses and methods for forming multiple decks of memory cells (2020-11-10),
11. 10651315 - Three dimensional memory (2020-05-12),
12. 10608004 - Semiconductor devices and methods of fabrication (2020-03-31),
13. 10600468 - Methods for operating ferroelectric memory cells each having multiple capacitors (2020-03-24),
14. 10403631 - Three-dimensional ferroelectric memory devices (2019-09-03),
15. 10340287 - Apparatuses and methods for forming multiple decks of memory cells (2019-07-02),

Title: The Innovative Journey of Zhenyu Lu

Introduction: Zhenyu Lu, a talented inventor based in Boise, ID (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Zhenyu Lu holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: Throughout his career, Zhenyu Lu has been recognized for his pioneering work in developing cutting-edge solutions that have revolutionized industries. His commitment to pushing the boundaries of innovation has led to the creation of products that have improved the lives of many.

Collaborations: Zhenyu Lu has collaborated with leading research institutions, universities, and tech companies to further his inventions and bring them to market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Zhenyu Lu's passion for innovation, coupled with his dedication to creating impactful technologies, has solidified his reputation as a visionary inventor. His continued pursuit of excellence promises a future filled with groundbreaking inventions that will shape the world for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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