The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Jun. 24, 2019
Applicant:

Wuxi Petabyte Technologies Co., Ltd., Wuxi, CN;

Inventor:

Zhenyu Lu, Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11514 (2017.01); H01L 27/11504 (2017.01); G11C 11/22 (2006.01); H01L 27/11587 (2017.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11514 (2013.01); H01L 27/11504 (2013.01); G11C 11/221 (2013.01); H01L 27/11587 (2013.01); H01L 27/11597 (2013.01);
Abstract

Embodiments of ferroelectric memory devices and methods for forming the ferroelectric memory devices are disclosed. In an example, a ferroelectric memory cell includes a first electrode, a second electrode, a doped ferroelectric layer disposed between the first electrode and the second electrode. The doped ferroelectric layer includes oxygen and one or more ferroelectric metals. The doped ferroelectric layer further includes a plurality of dopants including at least one dopant from one of Group II elements, Group III elements, or Lanthanide elements. The plurality of dopants are different from the one or more ferroelectric metals.


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