Zehong Li

Title: Zehong Li: Innovator in Power Semiconductor Technology

Introduction

Zehong Li, a prominent inventor based in Chengdu, China, has made significant contributions to the field of power semiconductor devices. With a total of 9 patents to his name, he has notably focused on innovations that enhance the performance and reliability of semiconductor technologies.

Latest Patents

Li's latest inventions include the "IGBT device with MOS controllable hole path" and a "trench MOS device with improved single event burn-out endurance."

The IGBT device is an advanced power semiconductor designed with a MOS controllable gate structure, incorporating a gate dielectric layer, MOS control gate electrode, and a P-type MOS channel region embedded in a P+ floating p-body region. This innovative design improves the saturation conduction voltage drop and reduces turn-off losses while enhancing the short-circuit withstand capability.

His trench MOS device addresses single event burnout issues by altering the trajectory of electron-hole pairs induced by single event effects, significantly improving the device’s endurance against such occurrences.

Career Highlights

Zehong Li has worked with renowned institutions, including the University of Electronic Science and Technology of China and the Institute of Electronic and Information Engineering of UESTC in Guangdong. His work in these institutions has laid the groundwork for his groundbreaking inventions in the semiconductor field.

Collaborations

Throughout his career, Li has collaborated with distinguished colleagues such as Bo Zhang and Min Ren. These collaborations have fostered an environment of innovation and research, contributing to the advancements in semiconductor technology.

Conclusion

Zehong Li's remarkable innovations in power semiconductor devices highlight his expertise and dedication to enhancing technology. His contributions will undoubtedly continue to influence the field of semiconductor engineering and inspire future advancements.