The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Jun. 29, 2016
University of Electronic Science and Technology of China, Chengdu, CN;
Electronic and Information Engineering IN Dongguan, Uestc, Dongguan, CN;
Zehong Li, Chengdu, CN;
Wenlong Song, Chengdu, CN;
Xunyi Song, Chengdu, CN;
Hongming Gu, Chengdu, CN;
Youbiao Zou, Chengdu, CN;
Jinping Zhang, Chengdu, CN;
Bo Zhang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC, Dongguan, CN;
Abstract
A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting a P+ single crystal silicon to prepare a P+ substrate; b): finishing top processes of the devices on the P+ substrate, forming at least a P type region, manufacturing active area and metallizing the top surface of the P+ substrate; c): thinning the back surface of the P+ single crystal silicon; d): selectively implanting Hions at the back surface repeatedly and then annealing to form N pillars in the P type region; and e): metallizing the back surface.