Hongming Gu

Title: Innovations of Hongming Gu in Power Semiconductor Devices

Introduction

Hongming Gu is a notable inventor based in Chengdu, China. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative patent.

Latest Patents

Hongming Gu holds a patent titled "Method for manufacturing vertical super junction drift layer of power semiconductor devices." This method involves several key steps: first, adopting a P+ single crystal silicon to prepare a P+ substrate. Next, he finishes the top processes of the devices on the P+ substrate, forming at least a P type region, manufacturing the active area, and metallizing the top surface of the P+ substrate. The process continues with thinning the back surface of the P+ single crystal silicon, selectively implanting H ions at the back surface repeatedly, and then annealing to form N pillars in the P type region. Finally, he metallizes the back surface.

Career Highlights

Hongming Gu has worked at the University of Electronic Science and Technology of China and the Electronic and Information Engineering in Dongguan, UESTC. His work in these institutions has contributed to advancements in semiconductor technology.

Collaborations

Some of his notable coworkers include Zehong Li and Wenlong Song. Their collaborative efforts have further enhanced the research and development in the field of power semiconductors.

Conclusion

Hongming Gu's innovative methods in manufacturing power semiconductor devices highlight his expertise and dedication to advancing technology. His contributions are significant in the realm of electronics and semiconductor engineering.