Wenlong Song

Title: Innovations of Wenlong Song in Power Semiconductor Devices

Introduction

Wenlong Song is a notable inventor based in Chengdu, China. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative patent.

Latest Patents

Wenlong Song holds a patent titled "Method for manufacturing vertical super junction drift layer of power semiconductor devices." This method involves several key steps: first, adopting a P+ single crystal silicon to prepare a P+ substrate; second, finishing top processes of the devices on the P+ substrate, which includes forming at least a P type region, manufacturing the active area, and metallizing the top surface of the P+ substrate; third, thinning the back surface of the P+ single crystal silicon; fourth, selectively implanting H ions at the back surface repeatedly and then annealing to form N pillars in the P type region; and finally, metallizing the back surface. This innovative approach enhances the efficiency and performance of power semiconductor devices.

Career Highlights

Wenlong Song has worked at the University of Electronic Science and Technology of China, where he has contributed to research and development in electronic engineering. He has also been associated with the Electronic and Information Engineering department in Dongguan, furthering his expertise in the field.

Collaborations

Wenlong has collaborated with notable colleagues such as Zehong Li and Xunyi Song, contributing to various projects and advancements in semiconductor technology.

Conclusion

Wenlong Song's innovative methods in manufacturing power semiconductor devices highlight his significant role in advancing technology in this field. His contributions are essential for the development of more efficient electronic devices.