The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

May. 23, 2017
Applicant:

University of Electronic Science and Technology of China, Chengdu, CN;

Inventors:

Min Ren, Chengdu, CN;

Yuci Lin, Chengdu, CN;

Huiping Bao, Chengdu, CN;

Lei Luo, Chengdu, CN;

Zehong Li, Chengdu, CN;

Bo Zhang, Chengdu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/872 (2006.01); H01L 29/15 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/157 (2013.01); H01L 29/158 (2013.01); H01L 29/66143 (2013.01);
Abstract

The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.


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