The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jul. 13, 2016
University of Electronic Science and Technology of China, Chengdu, CN;
Institute of Electronic and Information Engineering IN Dongguan, Uestc, Dongguan, CN;
Jinping Zhang, Chengdu, CN;
Yadong Shan, Chengdu, CN;
Gaochao Xu, Chengdu, CN;
Xin Yao, Chengdu, CN;
Jingxiu Liu, Chengdu, CN;
Zehong Li, Chengdu, CN;
Min Ren, Chengdu, CN;
Bo Zhang, Chengdu, CN;
Abstract
A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.