Gaochao Xu

Title: Gaochao Xu - Innovator in Bidirectional Insulated Gate Bipolar Transistor Technology

Introduction

Gaochao Xu is a prominent inventor based in Chengdu, China. He is recognized for his contributions to the field of semiconductor technology, particularly in the development of bidirectional insulated gate bipolar transistors (IGBTs). His innovative work has led to advancements in electronic devices and power management systems.

Latest Patents

Gaochao Xu holds a patent for a bidirectional insulated gate bipolar transistor. This device features a cellular structure that includes two MOS structures, a substrate drift layer, and two highly doped buried layers that function for carrier storage or field stop. The design incorporates two metal electrodes and isolating dielectrics. Each MOS structure consists of a body region, a heavily doped source region, a body contact region, and a gate structure. The symmetrical arrangement of the MOS structures on both the top and back surfaces of the substrate drift layer enhances the device's performance. The gate dielectric effectively separates the gate conductive material from the channel region of each MOS structure.

Career Highlights

Gaochao Xu has had a distinguished career, working at notable institutions such as the University of Electronic Science and Technology of China and the Institute of Electronic and Information Engineering in Dongguan. His expertise in electronic engineering has significantly contributed to the advancement of semiconductor technologies.

Collaborations

Gaochao Xu has collaborated with esteemed colleagues, including Jinping Zhang and Yadong Shan. Their collective efforts have fostered innovation and research in the field of electronics.

Conclusion

Gaochao Xu's work in the development of bidirectional insulated gate bipolar transistors exemplifies his commitment to advancing technology in the semiconductor industry. His contributions continue to influence the design and efficiency of electronic devices.