Yadong Shan

Title: Yadong Shan: Innovator in Bidirectional Insulated Gate Bipolar Transistors

Introduction

Yadong Shan is a prominent inventor based in Chengdu, China. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of bidirectional insulated gate bipolar transistors (IGBTs). His innovative work has led to advancements in electronic devices and systems.

Latest Patents

Yadong Shan holds a patent for a bidirectional insulated gate bipolar transistor. This device features a cellular structure that includes two MOS structures, a substrate drift layer, and two highly doped buried layers that operate for carrier storage or field stop. The design incorporates two metal electrodes and isolating dielectrics. Each MOS structure consists of a body region, a heavily doped source region, a body contact region, and a gate structure. The symmetrical arrangement of the MOS structures on the substrate drift layer enhances the device's performance and efficiency.

Career Highlights

Throughout his career, Yadong Shan has worked at notable institutions, including the University of Electronic Science and Technology of China and the Institute of Electronic and Information Engineering in Dongguan. His experience in these organizations has allowed him to collaborate with other experts in the field and contribute to various research projects.

Collaborations

Yadong Shan has collaborated with several colleagues, including Jinping Zhang and Gaochao Xu. Their joint efforts have furthered research and development in semiconductor technologies.

Conclusion

Yadong Shan's innovative work in bidirectional insulated gate bipolar transistors showcases his expertise and commitment to advancing semiconductor technology. His contributions have the potential to impact various electronic applications significantly.