The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Sep. 17, 2016
University of Electronic Science and Technology of China, Chengdu, CN;
Institute of Electronic and Information Engineering of Uestc IN Guangdong, Dongguan, CN;
Min Ren, Chengdu, CN;
Yuci Lin, Chengdu, CN;
Chi Xie, Chengdu, CN;
Zhiheng Su, Chengdu, CN;
Zehong Li, Chengdu, CN;
Jinping Zhang, Chengdu, CN;
Wei Gao, Chengdu, CN;
Bo Zhang, Chengdu, CN;
Abstract
A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.