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Boise, ID, United States of America

Yunfei Gao

USPTO Granted Patents = 15 (Patent Applications = 1)

Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 5(Granted Patents)

Company Filing History:

15 out of 37,920

Micron Technology Incorporated

Years Active: 2020-2025

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12219758 - Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies (2025-02-04),

2. 11910597 - Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies (2024-02-20),

3. 11908932 - Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems (2024-02-20),

4. 11600535 - Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies (2023-03-07),

5. 11581317 - Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies (2023-02-14),

6. 11538809 - Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory (2022-12-27),

7. 11527620 - Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material (2022-12-13),

8. 11393928 - Access devices formed with conductive contacts (2022-07-19),

9. 11348932 - Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies (2022-05-31),

10. 11257962 - Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods (2022-02-22),

11. 11069687 - Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies (2021-07-20),

12. 11038027 - Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material (2021-06-15),

13. 10825816 - Recessed access devices and DRAM constructions (2020-11-03),

14. 10797135 - Asymmetric source/drain regions of transistors (2020-10-06),

15. 10756217 - Access devices formed with conductive contacts (2020-08-25),

Title: The Innovative Journey of Inventor Yunfei Gao

Introduction: Inventor Yunfei Gao, a talented individual based in Boise, ID (US), has made significant contributions to the field of innovations with his creative mindset and dedication to problem-solving.

Latest Patents: Yunfei Gao holds several patents in various technological areas, showcasing his versatility and expertise in inventing cutting-edge solutions to complex challenges.

Career Highlights: Throughout his career, Yunfei Gao has demonstrated a remarkable ability to transform ideas into tangible inventions that have the potential to impact industries and improve people's lives. His passion for innovation has driven him to push the boundaries of what is possible.

Collaborations: Yunfei Gao has collaborated with leading research institutions, universities, and companies to further his inventions and bring them to market. His collaborative spirit and open-minded approach have led to successful partnerships that have accelerated the development of his innovative ideas.

Conclusion: Inventor Yunfei Gao's journey is a testament to the power of creativity, perseverance, and collaboration in driving meaningful innovations. His work continues to inspire others in the field and pave the way for future inventors to make their mark on the world.

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