The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
May. 02, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yunfei Gao, Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Stephen J. Kramer, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Sumeet C. Pandey, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G11C 13/00 (2006.01); H01L 29/16 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G11C 13/003 (2013.01); H01L 29/16 (2013.01); H01L 29/78603 (2013.01); H01L 29/78645 (2013.01); H01L 51/0554 (2013.01);
Abstract
A transistor comprises a channel region between a source region and a drain region, a dielectric material adjacent to the channel region, an electrode adjacent to the dielectric material, and an electrolyte between the dielectric material and the electrode. Related semiconductor devices comprising at least one transistors, related electronic systems, and related methods are also disclosed.