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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10825816 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Feb. 15, 2018

Recessed access devices and dram constructions

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yunfei Gao, Boise, ID (US);

Richard J. Hill, Boise, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Deepak Chandra Pandey, Boise, ID (US);

Srinivas Pulugurtha, Boise, ID (US);

Kamal M. Karda, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Mary A Wilczewski

Assistant Examiner:

Tsz K Chiu

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/10814 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 29/1054 (2013.01); H01L 29/20 (2013.01); H01L 29/267 (2013.01); H01L 29/41783 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01);
Abstract

A recessed access device comprises a conductive gate in a trench in semiconductor material. A gate insulator is along sidewalls and a base of the trench between the conductive gate and the semiconductor material. A pair of source/drain regions is in upper portions of the semiconductor material on opposing sides of the trench. A channel region is in the semiconductor material below the pair of source/drain regions along the trench sidewalls and around the trench base. At least some of the channel region comprises GaP.

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