The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Dec. 04, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/08 (2006.01); H01L 27/108 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 27/088 (2013.01); H01L 27/10805 (2013.01); H01L 27/10847 (2013.01);
Abstract
An example apparatus includes a first transistor and a second transistor, each having asymmetric source/drain regions. A source/drain region of the first transistor is directly coupled to a source/drain region of the second transistor at a junction. A depth of the junction is greater than a depth of another source/drain region of the first transistor and a depth of another source/drain region of the second transistor.