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For the Inventor, By the Inventor

Osaka, Japan

Yoshiharu Anda

This inventor holds 20 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Panasonic Intellectual Property Management Co., Ltd.. Active years: 2000-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiharu Anda. Retrieved from https://idiyas.com/inventor/yoshiharu-anda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 80.0

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 64(Granted Patents)


Location History:

  • Okayama, JP (2001 - 2006)
  • Uozu, JP (2007)
  • Toyama, JP (2009 - 2010)
  • Osaka, JP (2000 - 2022)

Company Filing History:

goldMedal9 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
silverMedal6 out of 16,454 
 
Panasonic Corporation
 patents
bronzeMedal4 out of 13,338 
 
Panasonic Intellectual Property Management Co., Ltd.
 patents
4. 1 out of 12 
 
Communications Research Laboratory, Ministry of Posts and
 patents
5. 1 out of 1,043 
 
Osaka University
 patents
6. 1 out of 367 
 
Panasonic Holdings Corporation
 patents
where one patent can have more than one assignee

Years Active: 2000-2022

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Areas of Expertise:
Semiconductor Device
Schottky Diode
Field Effect Transistor
Nitride Semiconductor
Pseudomorphic High Electron Mobility Transistor
High Frequency Apparatus
Organic Polymer Film
Integrated Circuit Fabrication
20 patents (USPTO):Explore Patents
1. 11342428 - Semiconductor device (2022-05-24),
2. 9842905 - Semiconductor device and method for fabricating the same (2017-12-12),
3. 9666664 - Semiconductor device (2017-05-30),
4. 9583608 - Nitride semiconductor device and method for manufacturing nitride semiconductor device (2017-02-28),
5. 9082884 - Schottky diode (2015-07-14),
6. 8890210 - Field effect transistor (2014-11-18),
7. 8872227 - Nitride semiconductor device (2014-10-28),
8. 8866231 - Nitride semiconductor device (2014-10-21),
9. 8791505 - Semiconductor device (2014-07-29),
10. 7829957 - Semiconductor device and manufacturing method thereof (2010-11-09),
11. 7495268 - Semiconductor device and manufacturing method of the same (2009-02-24),
12. 7199014 - Field effect transistor and method of manufacturing the same (2007-04-03),
13. 7144765 - Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof (2006-12-05),
14. 6967360 - Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof (2005-11-22),
15. 6570464 - High frequency apparatus (2003-05-27),

Title: The Innovative Journey of Yoshiharu Anda

Introduction: Yoshiharu Anda, a pioneering inventor hailing from Osaka, Japan, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Yoshiharu Anda's latest patents showcase his continuous commitment to innovation in various fields such as robotics, artificial intelligence, and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Yoshiharu Anda has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing cutting-edge solutions to address them. His patents have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Yoshiharu Anda has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of his ideas on a global scale.

Conclusion: In conclusion, Yoshiharu Anda's relentless pursuit of innovation and his passion for creating impactful solutions have solidified his position as a trailblazing inventor in the world of technology. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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