The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 01, 2004
Applicant:
Yoshiharu Anda, Uozu, JP;
Inventor:
Yoshiharu Anda, Uozu, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a field effect transistor which is suitable for a power amplifier application or the like, and have a double recess structure with superior repeatability. A film thickness of an AlGaAs layer can determine a depth of a second step of a recess uniquely by using the AlGaAs layer and an InGaP layer with a higher etching selection ratio, a double recess structure can be formed with desirable repeatability, and a high withstand voltage device suitable for a power amplifier application or the like is achieved by making both side surfaces of a gate electrode into the AlGaAs layer.