The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Jan. 11, 2005
Applicants:
Yoshiharu Anda, Okayama, JP;
Akiyoshi Tamura, Suita, JP;
Inventors:
Yoshiharu Anda, Okayama, JP;
Akiyoshi Tamura, Suita, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate, a GaAs buffer layerthat is formed on the semi-insulating GaAs substrate, AlGaAs buffer layer, a channel layer, a spacer layer, a carrier supply layer, a spacer layer, a Schottky layercomposed of an undoped InGaP material, and an n-type GaAs cap layerA gate electrodeis formed on the Schottky layer, and is composed of LaBand has a Schottky contact with the Schottky layer, and ohmic electrodesare formed on the n-type GaAs cap layer