The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Feb. 22, 2012
Hidekazu Umeda, Osaka, JP;
Yoshiharu Anda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Kyoto, JP;
Hidekazu Umeda, Osaka, JP;
Yoshiharu Anda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.