The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jan. 02, 2020
Applicants:

Panasonic Corporation, Kadoma, JP;

Osaka University, Suita, JP;

Inventors:

Hong-An Shih, Kyoto, JP;

Satoshi Nakazawa, Osaka, JP;

Naohiro Tsurumi, Kyoto, JP;

Yoshiharu Anda, Osaka, JP;

Heiji Watanabe, Osaka, JP;

Takayoshi Shimura, Osaka, JP;

Takuji Hosoi, Osaka, JP;

Mikito Nozaki, Osaka, JP;

Takahiro Yamada, Osaka, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 29/207 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device including: a metal-insulator-semiconductor (MIS) structure that includes a nitride semiconductor layer, a gate insulator film, and a gate electrode stacked in stated order; and a source electrode and a drain electrode that are disposed to sandwich the gate electrode in a plan view and contact the nitride semiconductor layer. The gate insulator film includes a threshold value control layer that includes an oxynitride film.


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