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For the Inventor, By the Inventor

Osaka, Japan

Satoshi Nakazawa

This inventor holds 17 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Devices. Top assignees: Panasonic Intellectual Property Management Co., Ltd., Panasonic Corporation, Matsushita Electric Industrial Co., Ltd.. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Nakazawa. Retrieved from https://idiyas.com/inventor/satoshi-nakazawa-m7yx0i6j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 82.4

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 37(Granted Patents)


Company Filing History:

goldMedal7 out of 13,338 
 
Panasonic Intellectual Property Management Co., Ltd.
 patents
silverMedal6 out of 16,454 
 
Panasonic Corporation
 patents
bronzeMedal3 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
4. 1 out of 1,045 
 
Osaka University
 patents
5. 1 out of 369 
 
Panasonic Holdings Corporation
 patents
where one patent can have more than one assignee

Years Active: 2005-2025

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Areas of Expertise:
On-State Voltage Measurement
Control System
Dual-Gate Switch
Field Effect Transistor
Semiconductor Fabrication
Nitride Semiconductor
Hetero-Junction Bipolar Transistor
Trench Isolation
Switching System
Reduced Contact Resistance
SOI Substrate
17 patents (USPTO):Explore Patents
1. 12451880 - On-state voltage measurement circuit (2025-10-21),
2. 12446282 - Control system and control method for dual-gate bidirectional switch (2025-10-14),
3. 12418287 - Switch system (2025-09-16),
4. 12143098 - Circuit for switching device, switching system, and processing method for switching device (2024-11-12),
5. 11736104 - Switch system (2023-08-22),
6. 11342428 - Semiconductor device (2022-05-24),
7. 10128363 - Field effect transistor (2018-11-13),
8. 9666664 - Semiconductor device (2017-05-30),
9. 8890210 - Field effect transistor (2014-11-18),
10. 8039329 - Field effect transistor having reduced contact resistance and method for fabricating the same (2011-10-18),
11. 7838904 - Nitride based semiconductor device with concave gate region (2010-11-23),
12. 7714359 - Field effect transistor having nitride semiconductor layer (2010-05-11),
13. 7705371 - Field effect transistor having reduced contact resistance and method for fabricating the same (2010-04-27),
14. 7465968 - Semiconductor device and method for fabricating the same (2008-12-16),
15. 7425732 - Nitride semiconductor device (2008-09-16),

Title: Inventor Satoshi Nakazawa

Introduction: Satoshi Nakazawa is a renowned inventor based in Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Satoshi Nakazawa holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Nakazawa has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved efficiency through his inventive solutions.

Collaborations: Throughout his career, Satoshi Nakazawa has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing in the tech community.

Conclusion: Satoshi Nakazawa's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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