The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 31, 2008
Kazushi Nakazawa, Osaka, JP;
Satoshi Nakazawa, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Kazushi Nakazawa, Osaka, JP;
Satoshi Nakazawa, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.