The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Feb. 17, 2006
Applicants:
Satoshi Nakazawa, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor includes a nitride semiconductor layer; an InAlGaN layer (wherein 0<x<1, 0<y<1 and 0<x+y<1) formed on the nitride semiconductor layer; and a source electrode and a drain electrode formed on and in contact with the InAlGaN layer. The lower ends of the conduction bands of the nitride semiconductor layer and the InAlGaN layer are substantially continuous on the interface therebetween.