The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Nov. 16, 2006
Applicants:
Tetsuzo Ueda, Osaka, JP;
Satoshi Nakazawa, Osaka, JP;
Tatsuo Morita, Kyoto, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.