The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Apr. 26, 2006
Tetsuzo Ueda, Osaka, JP;
Satoshi Nakazawa, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Toshiyuki Takizawa, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Satoshi Nakazawa, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Toshiyuki Takizawa, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.