Hong-An Shih

Title: Innovations of Hong-An Shih in Semiconductor Technology

Introduction

Hong-An Shih is a notable inventor based in Kyoto, Japan. She has made significant contributions to the field of semiconductor technology, particularly with her innovative designs and structures. Her work has implications for the advancement of electronic devices and systems.

Latest Patents

Hong-An Shih holds a patent for a semiconductor device that features a metal-insulator-semiconductor (MIS) structure. This structure includes a nitride semiconductor layer, a gate insulator film, and a gate electrode arranged in a specific order. Additionally, the device incorporates a source electrode and a drain electrode that are positioned to sandwich the gate electrode in a plan view, making contact with the nitride semiconductor layer. The gate insulator film is designed with a threshold value control layer that consists of an oxynitride film, showcasing her innovative approach to semiconductor design.

Career Highlights

Throughout her career, Hong-An Shih has worked with prominent organizations such as Panasonic Holdings Corporation and Osaka University. Her experience in these institutions has allowed her to develop and refine her expertise in semiconductor technology, contributing to her success as an inventor.

Collaborations

Hong-An Shih has collaborated with esteemed colleagues, including Satoshi Nakazawa and Naohiro Tsurumi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor research.

Conclusion

Hong-An Shih's contributions to semiconductor technology through her innovative patents and collaborations highlight her role as a leading inventor in the field. Her work continues to influence advancements in electronic devices and systems.