Fukuoka, Japan

Yoshifumi Tomomatsu

This inventor holds 26 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation. Active years: 1994-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshifumi Tomomatsu. Retrieved from https://idiyas.com/inventor/yoshifumi-tomomatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 76.9

Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 208(Granted Patents)


Location History:

  • Fukuoka, JP (1994 - 2007)
  • Chiyoda-ku, JP (2010 - 2012)
  • Tokyo, JP (2001 - 2019)

Company Filing History:


Years Active: 1994-2026

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Areas of Expertise:
Schottky Barrier Diode
Thermal Stress
Insulated Gate
Bipolar Transistor
Power Semiconductor
Field Effect
Overcurrent Control
PN Junction
Short-Circuit Tolerance
Temperature Detector
Cracking Reduction
Manufacturing Process
26 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Yoshifumi Tomomatsu in Semiconductor Technology**

Introduction

Yoshifumi Tomomatsu, a prominent inventor based in Fukuoka, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 25 patents, his contributions have greatly influenced the development of advanced semiconductor devices.

Latest Patents

Among his latest patents is a groundbreaking semiconductor device designed to reduce the occurrences of cracking in a semiconductor layer due to thermal stress. This innovation features an emitter electrode comprising three layers: a first electrode layer, a second electrode layer, and a third electrode layer, strategically arranged on an emitter layer. The unique combination of materials used for these electrode layers—including an aluminum-silicon alloy for the first layer and materials with different linear expansion coefficients for the subsequent layers—demonstrates Tomomatsu’s deep understanding of materials science and thermal dynamics.

Another notable invention is an Insulated Gate Bipolar Transistor (IGBT), which includes an n-type drift layer and p-type base layer, enabling improved efficiency and reliability in power electronic applications. This design helps to minimize thermal stress and enhance performance, showcasing Tomomatsu's commitment to innovation in semiconductor technology.

Career Highlights

Throughout his career, Yoshifumi Tomomatsu has held significant positions in leading technology firms. He has worked at Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha, where he applied his expertise in semiconductor devices and contributed to various transformative projects. His experience at these companies has allowed him to continuously innovate and refine electronic component designs.

Collaborations

Tomomatsu has also collaborated with renowned professionals in the field, including his coworkers Hideki Takahashi and Hiroshi Yamaguchi. Their joint efforts in semiconductor research and development have fostered an environment of innovation, leading to patented technologies that advance the industry as a whole.

Conclusion

Yoshifumi Tomomatsu's contributions to the semiconductor field through his innovative patents represent a significant advancement in technology. His work not only enhances the performance and reliability of semiconductor devices but also paves the way for future innovations in the industry. As he continues to explore new horizons in semiconductor technology, his legacy inspires upcoming inventors and engineers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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