The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Oct. 01, 2008
Applicants:
Tetsuo Takahashi, Chiyoda-ku, JP;
Yoshifumi Tomomatsu, Chiyoda-ku, JP;
Inventors:
Tetsuo Takahashi, Chiyoda-ku, JP;
Yoshifumi Tomomatsu, Chiyoda-ku, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width of a portion of an electric charge storage layer in a direction along which a gate electrode and a dummy gate are aligned is set to be at most 1.4 μm.
Takahashi, Tetsuo. (2012). Semiconductor device (U.S. Patent No. 8178947). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8178947
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile