The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Mar. 12, 2007
Kenji Suzuki, Chiyoda-ku, JP;
Hideki Takahashi, Chiyoda-ku, JP;
Yoshifumi Tomomatsu, Chiyoda-ku, JP;
Kenji Suzuki, Chiyoda-ku, JP;
Hideki Takahashi, Chiyoda-ku, JP;
Yoshifumi Tomomatsu, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A p-type collector region of an IGBT and an n-type cathode region of a free wheel diode are alternately formed in a second main surface of a semiconductor substrate. A back electrode is formed on the second main surface so as to be in contact with both of the p-type collector region and the n-type cathode region, and has a titanium layer, a nickel layer and a gold layer that are successively stacked from the side of the second main surface. A semiconductor device capable of obtaining a satisfactory ON voltage in any of conduction of an insulated gate field effect transistor and conduction of the free wheel diode as well as a manufacturing method thereof can thus be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile