The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Jul. 30, 2002
Youichi Ishimura, Tokyo, JP;
Yoshifumi Tomomatsu, Fukuoka, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In an insulated gate semiconductor device having first, second and third gate electrodes ( ) which are buried in first, second, and third trenches ( ), an emitter electrode ( ) is commonly connected to a base region ( ), an emitter region ( ) and the second gate electrode ( ), and the third gate electrode ( ) is connected to only the first gate electrode ( ). An insulating interlayer ( ) interposed between the emitter electrode ( ) and the gate electrodes ( ) has a pattern configuration such that the second gate electrode is partially connected to the emitter electrode, to thereby control a gate capacity and suppress a short-circuit current caused by a crack.