The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Aug. 12, 2002
Yoshifumi Tomomatsu, Fukuoka, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device has a first IGBT ( ) for controlling a principal current and a second IGBT ( ) for preventing an over-current of the first IGBT ( ). A diode portion ( ) is disposed between the emitter ( ) of the first IGBT ( ) and the emitter ( ) of the second IGBT ( ) so as to be in parallel with a sensing resistor ( ). The diode portion ( ) is composed of a first diode ( ) and a second diode ( ), which are connected in reverse series to each other. In order to prevent the over-current of the first IGBT ( ) and the destruction of the second IGBT ( ), each of the diodes ( ) has a breakdown voltage in the reverse voltage direction, which is lower than the endurance voltage between the emitters ( ) and is higher than the upper limit of the voltage sensed by the sensing resistor ( ).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile