The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jan. 14, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Seiya Nakano, Tokyo, JP;

Yoshifumi Tomomatsu, Tokyo, JP;

Yasuo Ata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/64 (2025.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/64 (2025.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 62/106 (2025.01);
Abstract

A Schottky barrier diode according to the present disclosure includes an n-type semiconductor substrate, one or more p-type guard rings provided on a side of an upper surface of the semiconductor substrate, an anode electrode provided on the upper surface of the semiconductor substrate, a cathode electrode provided on a rear surface of the semiconductor substrate and an insulating film provided on an inner guard ring on an innermost side among the one or more guard rings, wherein the anode electrode rides on the insulating film and has its end portion provided just above the inner guard ring, the anode electrode and the inner guard ring are provided away from each other, and a thickness of the insulating film is 1.0 μm or more.


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