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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Yoo-Cheol Shin

USPTO Granted Patents = 20 

Average Co-Inventor Count = 2.6

ph-index = 8

Forward Citations = 226(Granted Patents)


Location History:

  • Kyunggi-do, KR (2000 - 2003)
  • Suwon-shi, KR (2005 - 2011)
  • Gyeonggi-do, KR (2006 - 2012)
  • Suwon-si, KR (2010 - 2012)

Company Filing History:

goldMedal20 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2000-2012

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20 patents (USPTO):Explore Patents
1. 8228738 - NAND flash memory device having dummy memory cells and methods of operating same (2012-07-24),
2. 8188532 - Semiconductor device having a gate contact structure capable of reducing interfacial resistance (2012-05-29),
3. 8085592 - Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereof (2011-12-27),
4. 8030738 - Semiconductor device with resistor pattern and method of fabricating the same (2011-10-04),
5. 7977730 - Memory device and fabrication method thereof (2011-07-12),
6. 7881114 - NAND flash memory device having dummy memory cells and methods of operating same (2011-02-01),
7. 7863686 - Nonvolatile memory devices having a fin shaped active region (2011-01-04),
8. 7778082 - Non-volatile memory device and programming method (2010-08-17),
9. 7776687 - Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same (2010-08-17),
10. 7772654 - Methods of fabricating nonvolatile memory devices (2010-08-10),
11. 7605430 - Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same (2009-10-20),
12. 7538385 - Memory device and fabrication method thereof (2009-05-26),
13. 7480178 - NAND flash memory device having dummy memory cells and methods of operating same (2009-01-20),
14. 7399672 - Methods of forming nonvolatile memory devices (2008-07-15),
15. 7223659 - Memory device and fabrication method thereof (2007-05-29),

Title: A Glimpse into the Innovations of Yoo-Cheol Shin

Introduction

Yoo-Cheol Shin, an esteemed inventor based in Gyeonggi-do, South Korea, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, he has played a crucial role in advancing innovative solutions, particularly in NAND flash memory devices and semiconductor structures.

Latest Patents

Among Yoo-Cheol Shin's latest patents is a groundbreaking NAND flash memory device that features dummy memory cells and various methods for optimizing its operation. This invention includes a control circuit specifically designed to manage different voltage levels for non-selected memory cells, selected memory cells, and dummy memory cells during program operations. The design enhances memory cell efficiency and improves the overall performance of NAND flash devices.

Additionally, he holds a patent for a semiconductor device with a gate contact structure that minimizes interfacial resistance. This advanced structure consists of a semiconductor substrate, a polycrystalline silicon layer for the gate electrode, a middle conductive layer, and a top metal layer that exposes the silicon layer, which ultimately contributes to enhanced electrical performance and device reliability.

Career Highlights

Yoo-Cheol Shin is currently employed at Samsung Electronics Co., Ltd., a leading global technology company renowned for its innovation in semiconductor and consumer electronics. Throughout his career, Shin has continuously demonstrated his commitment to technological advancements, resulting in numerous patented technologies that have been pivotal in the electronics industry.

Collaborations

Shin has collaborated with other notable inventors, including Jung-Dal Choi and Jong-Sun Sel. Their joint efforts have fostered an environment of creativity and shared expertise, leading to innovative breakthroughs that have significantly impacted their field.

Conclusion

Yoo-Cheol Shin stands out as a prominent figure in semiconductor innovation. His latest patents reflect his dedication to advancing technology, particularly in NAND flash memory and semiconductor devices. Through his work with Samsung Electronics Co., Ltd. and collaborations with fellow inventors, Shin continues to contribute to the evolution of the semiconductor industry, paving the way for future advancements.

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