The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 13, 2010
Chang-seok Kang, Seongnam-si, KR;
Yoo-cheol Shin, Suwon-si, KR;
Jung-dal Choi, Suwon-si, KR;
Jong-sun Sel, Yongin-si, KR;
Ju-hyung Kim, Yongin-si, KR;
Sang-hun Jeon, Yongin-si, KR;
Chang-Seok Kang, Seongnam-si, KR;
Yoo-Cheol Shin, Suwon-si, KR;
Jung-Dal Choi, Suwon-si, KR;
Jong-Sun Sel, Yongin-si, KR;
Ju-Hyung Kim, Yongin-si, KR;
Sang-Hun Jeon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.