The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Apr. 15, 2009
Yoo-cheol Shin, Suwon-shi, KR;
Jeong-hyuk Choi, Yongin-shi, KR;
Sung-hoi Hur, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming a memory device, where a first insulator layer and a charge trapping layer may be formed on a substrate, and at least one of the first insulator layer and charge trapping layer may be patterned to form patterned areas. A second insulation layer and a conductive layer may be formed on the patterned areas, and one or more of the conductive layer, second insulator layer, charge trapping layer and first insulator layer may be patterned to form a string selection line, ground selection line, a plurality of word lines between the string selection and ground selection lines on the substrate, a low voltage gate electrode, and a plurality of insulators of varying thickness. The formed memory device may be a NAND-type non-volatile memory device having a SONOS gate structure, for example.