Gyeonggi-do, South Korea

Jeong-Hyuk Choi

This inventor holds 34 USPTO granted patents and 2 published patent applications, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1995-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong-Hyuk Choi. Retrieved from https://idiyas.com/inventor/jeong-hyuk-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 34 

% Patents Active = 67.6

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 332(Granted Patents)


Location History:

  • Kwacheon-city, KR (1995)
  • Suwon-shi, KR (1999)
  • Kyonggi-do, KR (2000 - 2008)
  • Kyunggi-do, KR (2003 - 2008)
  • Seongnam-si, KR (2007 - 2010)
  • Yongin-shi, KR (2005 - 2011)
  • Gyeonggi-do, KR (2005 - 2012)

Company Filing History:


Years Active: 1995-2012

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Areas of Expertise:
Nonvolatile Memory
Flash Memory
Semiconductor Devices
Memory Fabrication
Floating Gate
Charge Trap
NAND Flash
Trench Isolation
Integrated Circuits
Parasitic Capacitance
Cell Structures
Fabrication Methods
34 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Jeong-Hyuk Choi

Introduction

Jeong-Hyuk Choi is an accomplished inventor based in Gyeonggi-do, South Korea. With an impressive portfolio of 34 patents, his contributions to the field of nonvolatile memory devices have been significant. He works at Samsung Electronics Co., Ltd., where his research and innovations continue to push boundaries in technology.

Latest Patents

Jeong-Hyuk Choi's latest patents demonstrate his expertise in fabricating nonvolatile memory devices. One of his notable inventions involves the methods of fabricating a nonvolatile memory device by forming a trench mask pattern on a semiconductor substrate. This process defines active regions through substrate trenches, creating device isolation layer patterns. His innovative approach leads to the formation of conductive patterns essential for the memory device's functionality.

Another significant patent revolves around the fabrication of a NAND-type non-volatile memory device with a SONOS gate structure. This method employs a sequence of layering and patterning involving insulator and charge trapping layers, culminating in intricate word lines and gate electrodes vital for optimizing memory performance.

Career Highlights

Throughout his career, Jeong-Hyuk Choi has distinguished himself with a strong commitment to innovation in the semiconductor industry. His work at Samsung Electronics Co., Ltd. has been pivotal in developing advanced nonvolatile memory technologies. His patents reflect a deep understanding of semiconductor materials and processes, cementing his status as a key figure in this field.

Collaborations

Jeong-Hyuk Choi has collaborated with esteemed colleagues such as Sung-Hoi Hur and Jai-Hyuk Song. These associations have fostered a collaborative environment, allowing for the exchange of ideas and enhancing advancements in memory device technology.

Conclusion

In conclusion, Jeong-Hyuk Choi's contributions to the field of nonvolatile memory devices through his extensive patent portfolio highlight his status as a leading inventor in the semiconductor industry. His innovative methods and collaborative efforts continue to shape the future of memory technology, positioning him as an influential figure within Samsung Electronics Co., Ltd. and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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