The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2009

Filed:

Jan. 31, 2007
Applicants:

Jai-hyuk Song, Seoul, KR;

Jeong-hyuk Choi, Seongnam-si, KR;

Woon-kyung Lee, Seongnam-si, KR;

Inventors:

Jai-Hyuk Song, Seoul, KR;

Jeong-Hyuk Choi, Seongnam-si, KR;

Woon-Kyung Lee, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention provide a semiconductor device and a related method of fabricating a semiconductor device. In one embodiment, the invention provides a semiconductor device comprising a first gate electrode comprising a lower silicon pattern and an upper silicon pattern and disposed on an active region of a semiconductor substrate, wherein the upper silicon pattern has the same crystal structure as the lower silicon pattern and the active region is defined by a device isolation layer. The semiconductor device further comprises a gate insulating layer disposed between the active region and the first gate electrode.


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