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Seoul, South Korea

Jai-Hyuk Song

This inventor holds 17 USPTO granted patents, primarily in Non-Volatile Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2000-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jai-Hyuk Song. Retrieved from https://idiyas.com/inventor/jai-hyuk-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17

% Patents Active = 64.7

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 39(Granted Patents)


Location History:

  • Seoul-si, KR (2010)
  • Seoul, KR (2000 - 2012)
  • Seongnam-si, KR (2013 - 2023)

Company Filing History:

goldMedal17 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2000-2023

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Areas of Expertise:
Integrated Circuit
Non-Volatile Memory
Flash Memory
Memory Systems
Semiconductor Device
Fabrication Method
Double Diffused Junction
Interference Reduction
NAND Flash
DRAM Device
Wraparound Floating Gate
Impurity Regions
17 patents (USPTO):Explore Patents
1. 11728220 - Integrated circuit devices and methods of manufacturing the same (2023-08-15),
2. 11189632 - Integrated circuit devices and methods of manufacturing the same (2021-11-30),
3. 9824759 - Non-volatile memory devices, memory systems, and methods of operating the same (2017-11-21),
4. 8488386 - Nonvolatile memory device for reducing interference between word lines and operation method thereof (2013-07-16),
5. 8324052 - Methods of fabricating non-volatile memory devices including double diffused junction regions (2012-12-04),
6. 7898039 - Non-volatile memory devices including double diffused junction regions (2011-03-01),
7. 7867849 - Method of manufacturing a non-volatile semiconductor device (2011-01-11),
8. 7687860 - Semiconductor device including impurity regions having different cross-sectional shapes (2010-03-30),
9. 7683422 - Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same (2010-03-23),
10. 7678650 - Nonvolatile memory device and method of manufacturing the same (2010-03-16),
11. 7589374 - Semiconductor device and related fabrication method (2009-09-15),
12. 7560768 - Nonvolatile memory device and method of manufacturing the same (2009-07-14),
13. 7494871 - Semiconductor memory devices and methods for forming the same (2009-02-24),
14. 7352035 - Flash memory devices and methods for fabricating flash memory devices (2008-04-01),
15. 7303957 - Method of fabricating a flash memory device (2007-12-04),

Title: The Innovative Journey of Jai-Hyuk Song

Introduction: Jai-Hyuk Song is a pioneering inventor hailing from Seoul, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jai-Hyuk Song holds several patents in the realm of artificial intelligence and renewable energy technologies, showcasing his commitment to pushing the boundaries of what is possible in these rapidly evolving industries.

Career Highlights: With a career spanning over two decades, Jai-Hyuk Song has worked tirelessly to develop cutting-edge solutions that have the potential to revolutionize the way we live and work. His innovative spirit and dedication to excellence have earned him recognition as a leading figure in the world of invention.

Collaborations: Throughout his career, Jai-Hyuk Song has collaborated with top research institutions, universities, and tech companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Jai-Hyuk Song's passion for innovation, coupled with his technical expertise, has cemented his reputation as a trailblazer in the field of technology. His relentless pursuit of excellence continues to inspire inventors and entrepreneurs around the globe.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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